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| polyfet rf devices SV401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.65 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 16.0 A RF CHARACTERISTICS ( 150.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 75 10:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = Idq = 0.80 A, Vds = 28.0 V, F = 175 MHz 175 MHz VSWR Idq = 0.80 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 7.2 0.16 42.00 300.0 15.0 200.0 MIN 65 6.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 120.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.60 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 15.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SV401 POUT VS PIN GRAPH S V 401 Pout vs Pin F req=175MH z , V ds=28V , Idq=1.2A 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 P in in W a tts CAPACITANCE VS VOLTAGE S4 1 DIE CAPACITANCE 17 16 1000 Ciss Pout 15 14 13 12 100 Coss Efficiency@150W = 74% Gain 11 10 9 Crss 10 0 5 10 15 20 25 30 V D S IN V O L TS IV CURVE S4A 1 DIE IV 45 40 35 30 ID IN AMPS 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 V DS IN VOLTS vg=2v Vg=6v Vg=10v Vg=4v Vg=8v vg=12v ID & GM VS VGS 100.00 S4A 1 DIE ID & GM Vs VG Id in amps; Gm in mhos Id 10.00 gM 1.00 0 2 4 6 8 Vgs in Volts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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